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Transistor Type: High-Efficiency N-Channel MOSFET Power Transistor.
Transistor Polarity: N-Channel NMOS Transistor offering high switching speed and better efficiency.
Specification: Offers Power Dissipation (PD) of 1.4 W, Drain Current (ID) of 5 A at 25 ℃, Drain-Source Voltage (VDSS) of 30 V, and Drain-Source On-Resistance (RDS(on)) of 0.031 Ω.
Application: Ideal for a diverse range of applications, including power supply circuits, motor control, and electronic switches due to its high switching speed and low on-resistance.
Package: Comes in a pack of 100 in a secure, Anti-Static bag for electrostatic protection, ESD safety, and enhanced shelf life.