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Chanzon IRF520N TO-220AB NMOS N-Channel Power MOSFET Transistor, High-Performance Power Semiconductors (Pack of 10pcs)
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Chanzon IRF520N TO-220AB NMOS N-Channel Power Features
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Transistor Type: High-Efficiency NMOS N-Channel Power MOSFET Transistor.
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Transistor Polarity: N-Channel for high-speed switching and excellent power management.
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Specification: Superior performance with Power Dissipation (PD) of 48W at 25℃, Drain Current (ID) of 9.7A at 25℃, Drain-Source Voltage (VDSS) up to 100V, and Drain-Source On-Resistance (RDS(on)) of 0.2 Ohms.
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Application: Suitable for diverse applications requiring high-speed switching, robust power management like power supplies, motor control, lighting control, and audio amplifiers.
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Package: Shipped in an Anti-Static bag for electrostatic protection, ESD safety, and long shelf life.
