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Transistor Type: High-power N-Channel MOS NMOS Transistor.
Model Specification: Equipped with a dissipation power(PD) of 150 W, drain current(ID) of 20A (at 25℃), drain-source voltage(VDSS) of 500V and on-state resistance(RDS(on)) of 0.27 Ω.
Professional Design: TO-3P package for better heat dissipation and enhanced performance.
Application: Perfect choice for high power switching and amplifier circuits like power supplies, motor controls and other electronic applications.
Package: Shipped in an anti-static bag providing electrostatic protection, ensures ESD safety and guarantees long shelf life.