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Transistor Type: High Power N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor.
Transistor Polarity: NMOS N-Channel MOSFET Transistor.
Specification: Efficiently Handles Drain Current (ID) up to 20A, Drain-to-Source Voltage (VDSS) up to 600V, and Drain-to-Source On-state Resistance (RDS(on)) of 0.45 Ω.
Application: Ideal for high-power switching, amplification, and power management applications such as power supplies, motor control, and high-performance audio amplifiers.
Package: Comes in a pack of 10 in a TO-220F encapsulation for optimal performance and longevity, packed in an anti-static bag for electrostatic protection and long shelf life.