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FinFET Modeling for IC Simulation and Design: Using the BSIM-CMG Standard
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About FinFET Modeling For IC Simulation And Design: Using
Product Description This book is the first to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. With this book you will learn: Why you should use FinFET The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG) Parameter extraction in BSIM-CMG FinFET circuit design and simulation Review Learn how to do FinFET modeling using the BSIM-CMG standard from the experts From the Back Cover This book is the first to explain FinFET modeling for IC simulation and the industry standard BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. Key Features: Authored by the lead inventor and developer of FinFET, and developers of the BSIM-CMG standard model, providing an experts insight into the specifications of the standard The first book on the industry-standard FinFET model - BSIM-CMG With this book you will learn: Why you should use FinFET The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG) Parameter extraction in BSIM-CMG FinFET circuit design and simulation About the Author Yogesh Singh Chauhan is a professor at Indian Institute of Technology Kanpur, India. He was with Semiconductor Research & Development Center at IBM Bangalore during 2007 – 2010; Tokyo Institute of Technology in 2010; University of California Berkeley during 2010-2012; and ST Microelectronics during 2003-2004. He is the developer of several industry standard SPICE models: ASM-GaN-HEMT model, BSIM-BULK (formerly BSIM6), BSIM-CMG, BSIM-IMG, BSIM4 and BSIM-SOI models. His research interests are characterization, modeling, and simulation of semiconductor devices and RF circuit design. He is the Fellow of IEEE, Editor of IEEE Transactions on Electron Devices and Distinguished Lecturer of the IEEE Electron Devices Society. He has served in the technical program committees of IEDM, SISPAD, ESSDERC, EDTM, and VLSI Design conferences. He has published more than 250 papers in international journals and conferences. Darsen Lu was one of the key contributors of the industry standard FinFET compact model, BSIM-CMG, and thin-body SOI compact model, BSIM-IMG. He received the B.S. degree in electrical engineering in 2005, from National Tsing Hua University, Hsinchu, Taiwan, and the M.S. and Ph.D. degrees in electrical engineering from the University of California, Berkeley, in 2007 and 2011. Since 2011, he has been a Research Scientist with the IBM Thomas J. Watson Research Center, Yorktown Heights, NY. His current research focuses on the modeling of novel semiconductor devices such as SiGe FinFETs, phase change memory and carbon-based transistors. Sriramkumar Venugopalan received his MS and Ph.D. degree in Electrical Engineering at University of California, Berkeley and his Bachelors degree from Indian Institute of Technology (IIT) Kanpur. While at Berkeley he worked in the BSIM Group and pursued research and development of multi-gate transistor compact SPICE models that contributed to the industry standard BSIM-CMG model. He has authored and co-authored more than 30 research papers in the area
