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Emerging Resistive Switching Memories (SpringerBriefs in Materials)
Product ID : 19310510
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19310510
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About Emerging Resistive Switching Memories
Product Description This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices. From the Back Cover About the Author Jianyong Ouyang is an Associate Professor in the Department of Materials Science and Engineering at National University of Singapore.
