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Third generation Power MOSFETs from provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. Maximum Continuous Drain Current:11 A Maximum Drain Source Voltage:200 V Maximum Drain Source Resistance:500 mΩ Minimum Gate Threshold Voltage:2V Dimensions:10.41 x 4.7 x 9.01mm Minimum Operating Temperature:-55 °C Maximum Operating Temperature:+150 °C Package include 10pcs*IRF9640