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This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications. Transistor Polarity:P Channel Continuous Drain Current Id:-23A Drain Source Voltage Vds:-100V On Resistance Rds(on):0.117ohm Rds(on) Test Voltage Vgs:-10V Threshold Voltage Vgs:-4V No. of Pins:3Pins Operating Temperature Max:175°C Package include: 10pcs*IRF9540N