Transistor Silicon Military KT118A (2T118A) Analogue 2N6565 USSR 2 pcs

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Transistor Silicon Military KT118A Features

• Transistor silicon military KT118A (2T118A) analogue 2N6565 USSR 2 pcs

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About Transistor Silicon Military KT118A

Transistors KT118A (2T118A) silicon epitaxial planar dvuhemitternye structure p-n-p switching. Designed for use in the modulators. Available in-metal housing with flexible leads. Device type is indicated on the shell side. KT118A (2T118A): transistor structure: p-n-p Pk max - Constant collector dissipation power: 100 mW; Ukbo sample - breakdown voltage collector-base for a given reverse current collector and open emitter circuit: 15 V; Uebo sample - breakdown voltage emitter-base reverse current at a given emitter and collector open circuit: 31 V; Ik max - Maximum permissible DC Collector Current: 50mA; Ikbo - Reverse collector current - the current through the collector junction reverse voltage at a specified collector-base and emitter open output: less than 0.1 uA; Rke us - saturation resistance between the collector and emitter: 100 Ohm