Chanzon MPSA13 TO-92 NPN Darlington Power Bipolar Junction Transistor (Pack of 100pcs)

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Chanzon MPSA13 TO-92 NPN Darlington Power Bipolar Features

• Transistor Type: High-performance NPN Darlington Bipolar Junction Transistor.

• Transistor Polarity: NPN type for advanced amplification and switching applications.

• Specification: Features a PD of 1.5W, IC of 0.5A, VCEO and VCBO of 30V, VEBO of 10V, and hFE of ≥5000.

• Application: Ideal for a variety of electronic circuits including power supplies, motor controls, and more.

• Package: Pack of 100pcs in an anti-static bag that offers ESD protection, ensuring safe storage and extended shelf life.

About Chanzon MPSA13 TO-92 NPN Darlington Power Bipolar

Product Description: The MPSA13 is a high-performance Darlington Transistor in an NPN configuration, designed for applications requiring high voltage and power handling capabilities. Ideal for use in amplifiers, switches, and many other electronic circuits. Key Features: - Darlington Configuration for enhanced voltage gain - Maximum Collector Current (IC): 0.5 A - Collector Power Dissipation (PC): 625 mW - Junction Temperature (Tj): up to 150℃ - Storage Temperature: -55℃ to +150℃ Electrical Characteristics: - Collector-Base Breakdown Voltage (V(BR)CBO): 30 V - Collector-Emitter Breakdown Voltage (V(BR)CEO): 30 V - Emitter-Base Breakdown Voltage (V(BR)EBO): 10 V - DC Current Gain (hFE): 5000 to 10000 - Collector-Emitter Saturation Voltage (VCE(sat)): 1.5 V at IC=100mA - Base-Emitter Voltage (VBE): 2.0 V at VCE=5V, IC=100mA - Current Gain-Bandwidth Product (fT): 125 MHz Thermal Resistance: - Thermal Resistance from Junction to Ambient (RθJA): 200 ℃/W Operational Conditions: - Operating Junction Temperature: -55℃ to 150℃ - Ambient Temperature (Ta): 25℃ for typical characteristics Physical Dimensions: - Package: TO-92 - Outline Dimensions: 1.270mm x 0.050mm (typical) Static Characteristics: - Base Current (IB) at IC=0.3uA: varies with VCE - Collector Current (IC) at VCE=5V: varies with temperature Typical Characteristics: - DC Current Gain (hFE) at f=1MHz: varies with IC - Collector-Emitter Saturation Voltage (VCEsat) at VCE=5V: varies with temperature and IC - Base-Emitter Voltage (VBE) at IC: varies with temperature