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Silicon-Germanium Heterojunction Bipolar Transistors
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About Silicon-Germanium Heterojunction Bipolar Transistors
Product Description This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe Hbts). It offers you a complete, from-the-ground-up understanding of SiGe Hbt devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe Hbt. Moreover, the book helps you gain a thorough understanding of the subtle optimization issues and design tradeoffs of SiGe Hbts and Rf/microwave circuits built with this technology. The book explains how SiGe Hbts offer the high-performance associated with Iii-V devices such as GaAs and InP, while preserving the low-cost, high-integration level, high yield, and economy-of-scale benefits of conventional silicon Ic manufacturing. You discover why SiGe technology offers a unique solution for 21st century communications Ic needs. About the Author John D. Cressler is Professor of electrical and computer engineering at The Georgia Institute of Technology . Professor Cressler received his Ph.D. in applied physics from Columbia University. Guofu Niu is Associate Professor of electrical and computer engineering at Auburn University. He received his Ph.D. in electrical engineering from Fudan University, in Shanghai, China.
